X-ray scattering study on the electric field-induced interfacial magnetic anisotropy modulation at CoFeB / MgO interfaces

被引：3

作者：

Song, Kyung Mee ^{[1
,2
]}

Kim, Dong-Ok ^{[1
,3
,4
]}

Kim, Jae-Sung ^{[2
]}

Lee, Dong Ryeol ^{[3
]}

Choi, Jun Woo ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Ctr Spintron, Seoul 02792, South Korea

[2] Sookmyung Womens Univ, Dept Phys, Seoul 04130, South Korea

[3] Soongsil Univ, Dept Phys, Seoul 06978, South Korea

[4] Korea Res Inst Stand & Sci, Quantum Technol Inst, Daejeon 34113, South Korea

来源：

CURRENT APPLIED PHYSICS | 2018年 / 18卷 / 11期

关键词：

Spintronics; Magnetic anisotropy; X-ray scattering; Electric field control of magnetism; ATOMIC LAYERS;

D O I：

10.1016/j.cap.2018.05.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electric field-induced modifications of magnetic anisotropy in CoFeB/MgO systems are studied using X-ray resonant magnetic scattering and magneto-optical Kerr effect. Voltage dependent changes of the magnetic anisotropy of -12.7 fJ/Vm and - 8.32 fJ/Vm are observed for Ta/CoFeB/MgO and Hf/CoFeB/MgO systems, respectively. This implies that the interfacial perpendicular magnetic anisotropy is reduced (enhanced) when electron density is increased (decreased). X-ray resonant magnetic scattering measurements reveal that the small in-plane magnetic component of the remanent state of CoFeB/MgO systems with weak magnetic anisotropy changes depending on the applied voltage leading to modification of the magnetic anisotropy at the CoFeB/MgO interface.

引用

页码：1212 / 1217

页数：6

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