X-ray scattering study on the electric field-induced interfacial magnetic anisotropy modulation at CoFeB / MgO interfaces

被引:3
|
作者
Song, Kyung Mee [1 ,2 ]
Kim, Dong-Ok [1 ,3 ,4 ]
Kim, Jae-Sung [2 ]
Lee, Dong Ryeol [3 ]
Choi, Jun Woo [1 ]
机构
[1] Korea Inst Sci & Technol, Ctr Spintron, Seoul 02792, South Korea
[2] Sookmyung Womens Univ, Dept Phys, Seoul 04130, South Korea
[3] Soongsil Univ, Dept Phys, Seoul 06978, South Korea
[4] Korea Res Inst Stand & Sci, Quantum Technol Inst, Daejeon 34113, South Korea
关键词
Spintronics; Magnetic anisotropy; X-ray scattering; Electric field control of magnetism; ATOMIC LAYERS;
D O I
10.1016/j.cap.2018.05.003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electric field-induced modifications of magnetic anisotropy in CoFeB/MgO systems are studied using X-ray resonant magnetic scattering and magneto-optical Kerr effect. Voltage dependent changes of the magnetic anisotropy of -12.7 fJ/Vm and - 8.32 fJ/Vm are observed for Ta/CoFeB/MgO and Hf/CoFeB/MgO systems, respectively. This implies that the interfacial perpendicular magnetic anisotropy is reduced (enhanced) when electron density is increased (decreased). X-ray resonant magnetic scattering measurements reveal that the small in-plane magnetic component of the remanent state of CoFeB/MgO systems with weak magnetic anisotropy changes depending on the applied voltage leading to modification of the magnetic anisotropy at the CoFeB/MgO interface.
引用
收藏
页码:1212 / 1217
页数:6
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