Electric-field-induced magnetization switching in CoFeB/MgO magnetic tunnel junctions

被引：4
|
作者：
Kanai, Shun [1 ,2 ,3 ]
Matsukura, Fumihiro [1 ,2 ,3 ,4 ]
Ohno, Hideo [1 ,2 ,3 ,4 ,5 ]
机构：
[1] Tohoku Univ, Res Inst Elect Commun, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, CSIS, Sendai, Miyagi 9808577, Japan
[3] Tohoku Univ, CSRN, Sendai, Miyagi 9808577, Japan
[4] Tohoku Univ, WPI AIMR, Sendai, Miyagi 9808577, Japan
[5] Tohoku Univ, Ctr Innovat Integrated Elect Syst CIES, Sendai, Miyagi 9800845, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 08期
关键词：
MAGNETOCRYSTALLINE ANISOTROPY; FERROMAGNETIC SEMICONDUCTOR; ROOM-TEMPERATURE; ATOMIC LAYERS; MAGNETORESISTANCE; MANIPULATION; TRANSITION; MONOLAYERS; REVERSAL; ORIGIN;
D O I：
10.7567/JJAP.56.0802A3
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electric-field effect on magnetic anisotropy provides a low-energy scheme for magnetization switching in magnetic tunnel junctions. We review our recent works on the electric-field-induced magnetization switching in CoFeB/MgO-based magnetic tunnel junctions. We show that the switching with a higher speed and a lower energy than the spin-transfer switching can be realized using the electric-field effect. The increase of the electric-field modulation ratio is expected to result in a marked reduction of the switching energy as well as in the improvement of the switching reliability for magnetic tunnel junctions with a high thermal stability factor. Further study is necessary to improve the modulation ratio. (C) 2017 The Japan Society of Applied Physics
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页数：7
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