Rectifying and Photovoltage Properties of ZnO:Al/p-Si Heterojunction

被引：29
|
作者：
Ma Jing-Jing [1 ]
Jin Ke-Xin [1 ]
Luo Bing-Cheng [1 ]
Fan Fei [1 ]
Xing Hui [1 ]
Zhou Chao-Chao [1 ]
Chen Chang-Le [1 ]
机构：
[1] Northwestern Polytech Univ, Sch Sci, Shaanxi Key Lab Condensed Matter Struct & Propert, Xian 710072, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2010年 / 27卷 / 10期
基金：
中国国家自然科学基金;
关键词：
ZNO;
D O I：
10.1088/0256-307X/27/10/107304
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
An Al-doped ZnO/p-Si heterojunction is fabricated by a laser molecular beam epitaxy technique. The abnormally high ideality factors (n >> 2) of the prepared heterojunction are observed in the interim bias voltage range. A theoretical model is proposed to understand the much higher ideality factor of the special heterojunction diode. The ZnO:Al film shows metal-like conductivity with the electrical resistivity about 6.56 x 10(-4) Omega.cm at room temperature. The temperature dependence of the photovoltage indicates that the photovoltaic effect of the Al-doped ZnO based heterojunction can be changed by the intrinsic metal-semiconductor transition at 120 K.
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收藏
页数：4
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