Rectifying characteristics and equivalent circuit of the epitaxial n-PbTe/p-Si heterojunction

In the present work, preparation of n-PbTe epitaxial layer was grown on p-Si single crystalline substrate by means of liquid phase epitaxy. The crystalline structure and morphology of n-PbTe/p-Si heterojunctions were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The results showed high quality PbTe thin films were directly deposited onto p-type silicon (111) substrates. The current-voltage characteristics were measured in the temperature range 300-400 K. The n-PbTe/p-Si heterojunctions showed a good rectification ratio at the bias voltage of +/- 1.5 V at 300K. The electronic parameters such as series resistance, ideality factor barrier height were determined. The two series RC components electrical model in order to study the dynamic behaviour of the Schottky diode in low frequency and to improve the effect of barrier inhomogeneities in electrical properties were used.