Rectifying and Photovoltage Properties of ZnO:Al/p-Si Heterojunction

被引：29

作者：

Ma Jing-Jing ^{[1
]}

Jin Ke-Xin ^{[1
]}

Luo Bing-Cheng ^{[1
]}

Fan Fei ^{[1
]}

Xing Hui ^{[1
]}

Zhou Chao-Chao ^{[1
]}

Chen Chang-Le ^{[1
]}

机构：

[1] Northwestern Polytech Univ, Sch Sci, Shaanxi Key Lab Condensed Matter Struct & Propert, Xian 710072, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2010年 / 27卷 / 10期

基金：

中国国家自然科学基金;

关键词：

ZNO;

D O I：

10.1088/0256-307X/27/10/107304

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An Al-doped ZnO/p-Si heterojunction is fabricated by a laser molecular beam epitaxy technique. The abnormally high ideality factors (n >> 2) of the prepared heterojunction are observed in the interim bias voltage range. A theoretical model is proposed to understand the much higher ideality factor of the special heterojunction diode. The ZnO:Al film shows metal-like conductivity with the electrical resistivity about 6.56 x 10(-4) Omega.cm at room temperature. The temperature dependence of the photovoltage indicates that the photovoltaic effect of the Al-doped ZnO based heterojunction can be changed by the intrinsic metal-semiconductor transition at 120 K.

引用

页数：4

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