Electrical characterization of DC sputtered ZnO/p-Si heterojunction

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[1] Ocak, Yusuf Selim
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Ocak, Y.S. (yusufselim@gmail.com) | 1600年 / Elsevier Ltd卷 / 513期
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ZnO thin films were formed on a p-Si semiconductor and a glass by DC sputtering technique. The ZnO films were analyzed using UV-vis spectroscopy and X-ray diffraction (XRD). Electrical and photoelectrical parameters of ZnO/p-Si heterojunction were determined by current-voltage (I-V); capacitance-voltage (C-V) and capacitance-frequency (C-f) of the device in dark and under the light with 100 mW/cm2 and AM 1.5 illumination property. The device had a good rectifying property with 1.35 ideality factor; 0.76 eV barrier height and 6.69 kΩ series resistance values. It was seen that I-V; C-V and C-f measurements of the heterojunction had good sensitivity to the light and the device behaves as a photodiode and a photocapacitor. © 2011 Elsevier B.V. All rights reserved;
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