Fabrication and Characterization of Coaxial p-Copper Oxide/n-ZnO Nanowire Photodiodes

被引：52

作者：

Hsueh, H. T. ^{[1
,2
]}

Chang, S. J. ^{[3
,4
]}

Weng, W. Y. ^{[3
,4
]}

Hsu, C. L. ^{[5
]}

Hsueh, T. J. ^{[6
]}

Hung, F. Y. ^{[7
]}

Wu, S. L. ^{[8
]}

Dai, B. T.

机构：

[1] Natl Nano Devices Labs, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Inst Nanotechnol & Microsyst Engn, Tainan 701, Taiwan

[3] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[4] Natl Cheng Kung Univ, Dept Elect Engn, Ctr Micro Nano Sci & Technol, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[5] Natl Taiwan Univ, Dept Elect Engn, Tainan 700, Taiwan

[6] Natl Nano Devices Labs, Tainan 741, Taiwan

[7] Natl Cheng Kung Univ, Inst Nanotechnol & Microsyst Engn, Tainan 701, Taiwan

[8] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 833, Taiwan

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2012年 / 11卷 / 01期

关键词：

Low-frequency noise characteristic; photodiode; ZnO nanowires; THIN-FILMS; CUPROUS-OXIDE; CUO FILMS; GROWTH; CU2O; PHOTODETECTORS; NANORODS; HYDROGEN; TUNGSTEN; DEFECTS;

D O I：

10.1109/TNANO.2011.2159620

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The deposition of copper oxide onto vertically well-aligned n-ZnO nanowires by sputtering and the fabrication of p-copper oxide/n-ZnO coaxial nanowire photodiodes are reported. It was found that we could change the copper oxidation number to obtain Cu2O/ZnO nanowire photodiode, Cu4O3/ZnO nanowire photodiode and CuO/ZnO nanowire photodiode by simply changing the O-2 flow rate during deposition. It was also found that noise equivalent powers were 6.1 x 10(-11), 3.8 x 10(-10), and 7.2 x 10(-8) W while normalized detectivities were 6.35 x 10(9), 1.02 x 10(9), and 5.37 x 10(6) cmHz(0.5) W-1 for the fabricated Cu2O/ZnO nanowire photodiode, Cu4O3/ZnO nanowire photodiode and CuO/ZnO nanowire photodiode, respectively.

引用

页码：127 / 133

页数：7

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