Fabrication and Characterization of Coaxial p-Copper Oxide/n-ZnO Nanowire Photodiodes

被引：52
|
作者：
Hsueh, H. T. [1 ,2 ]
Chang, S. J. [3 ,4 ]
Weng, W. Y. [3 ,4 ]
Hsu, C. L. [5 ]
Hsueh, T. J. [6 ]
Hung, F. Y. [7 ]
Wu, S. L. [8 ]
Dai, B. T.
机构：
[1] Natl Nano Devices Labs, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Inst Nanotechnol & Microsyst Engn, Tainan 701, Taiwan
[3] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan
[4] Natl Cheng Kung Univ, Dept Elect Engn, Ctr Micro Nano Sci & Technol, Adv Optoelect Technol Ctr, Tainan 701, Taiwan
[5] Natl Taiwan Univ, Dept Elect Engn, Tainan 700, Taiwan
[6] Natl Nano Devices Labs, Tainan 741, Taiwan
[7] Natl Cheng Kung Univ, Inst Nanotechnol & Microsyst Engn, Tainan 701, Taiwan
[8] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 833, Taiwan
来源：
IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2012年 / 11卷 / 01期
关键词：
Low-frequency noise characteristic; photodiode; ZnO nanowires; THIN-FILMS; CUPROUS-OXIDE; CUO FILMS; GROWTH; CU2O; PHOTODETECTORS; NANORODS; HYDROGEN; TUNGSTEN; DEFECTS;
D O I：
10.1109/TNANO.2011.2159620
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The deposition of copper oxide onto vertically well-aligned n-ZnO nanowires by sputtering and the fabrication of p-copper oxide/n-ZnO coaxial nanowire photodiodes are reported. It was found that we could change the copper oxidation number to obtain Cu2O/ZnO nanowire photodiode, Cu4O3/ZnO nanowire photodiode and CuO/ZnO nanowire photodiode by simply changing the O-2 flow rate during deposition. It was also found that noise equivalent powers were 6.1 x 10(-11), 3.8 x 10(-10), and 7.2 x 10(-8) W while normalized detectivities were 6.35 x 10(9), 1.02 x 10(9), and 5.37 x 10(6) cmHz(0.5) W-1 for the fabricated Cu2O/ZnO nanowire photodiode, Cu4O3/ZnO nanowire photodiode and CuO/ZnO nanowire photodiode, respectively.
引用
收藏
页码：127 / 133
页数：7
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