Analytical Model for Power Switching GaN-Based HEMT Design

被引：25
|
作者：
Esposto, Michele [1 ,2 ]
Chini, Alessandro [1 ]
Rajan, Siddharth [2 ,3 ]
机构：
[1] Univ Modena & Reggio Emilia, Dept Informat Engn, I-41125 Modena, Italy
[2] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA
[3] Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 05期
关键词：
Analytical model; GaN high-electron mobility transistor (HEMT); power switching; BOOST CONVERTER;
D O I：
10.1109/TED.2011.2112771
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The GaN high-electron mobility transistor (HEMT) structure has been widely investigated, particularly for radio-frequency applications. This structure is suitable for high-frequency switching applications in power electronics because of the high breakdown field of GaN and the high mobility of the channel. In this paper, a physical model for predicting the power-switching operation of GaN-based HEMTs as a function of material and device parameters is proposed. Analytical equations for total losses and power dissipation density are derived and discussed both qualitatively and quantitatively.
引用
收藏
页码：1456 / 1461
页数：6
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