GaN-based high voltage transistors for efficient power switching

被引：34

作者：

Waltereit, Patrick ^{[1
]}

Reiner, Richard ^{[1
]}

Czap, Heiko ^{[1
]}

Peschel, Detlef ^{[1
]}

Mueller, Stefan ^{[1
]}

Quay, Ruediger ^{[1
]}

Mikulla, Michael ^{[1
]}

Ambacher, Oliver ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 5 | 2013年 / 10卷 / 05期

关键词：

GaN; high voltage; switch;

D O I：

10.1002/pssc.201200563

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present results from GaN-based high voltage transistors used for power switching applications. The static and dynamic properties of transistors on SiC and Si substrates are determined. Overall, this technology is capable to deliver 1000 V breakdown and 95 A output current as well as a lower product of on-resistance and gate charge than conventional Si-based structures. Areas of further improvement in epitaxial growth and device processing are outlined in order to combine these high currents and high voltages in a single device. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：831 / 834

页数：4

共 50 条

[1] GaN-based Gate Injection Transistors for Power Switching Applications
Ueda, Tetsuzo
Handa, Hiroyuki
Kinoshita, Yusuke
Umeda, Hidekazu
Ujita, Shinji
Kajitani, Ryo
Ogawa, Masahiro
Tanaka, Kenichiro
Morita, Tatsuo
Tamura, Satoshi
Ishida, Hidetoshi
Ishida, Masahiro
[J]. 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2014,
[2] GaN-based lateral and vertical power devices for high voltage switching applications
Mishra, Umesh
[J]. INTERNATIONAL EXHIBITION AND CONFERENCE FOR POWER ELECTRONICS, INTELLIGENT MOTION AND POWER QUALITY 2010 (PCIM EUROPE 2010), VOLS 1 AND 2, 2010, : 472 - 472
[3] High voltage GaN-based power HEMTs with field plate technique: Breakdown voltage and switching characteristics
Takada, Y
Saito, W
Kuraguchi, M
Omura, I
Tsuda, K
[J]. 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2347 - 2350
[4] Results, potential and challenges of high power GaN-based transistors
Eastman, LF
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1999, 176 (01): : 175 - 178
[5] Technological approaches towards high voltage, fast switching GaN power transistors
Wuerfl, J.
Hilt, O.
Bahat-Treidel, E.
Zhytnytska, R.
Klein, K.
Kotara, P.
Brunner, F.
Knauer, A.
Krueger, O.
Weyers, M.
Traenkle, G.
[J]. CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2013 (CSTIC 2013), 2013, 52 (01): : 979 - 989
[6] Status of GaN-based Power Switching Devices
Hikita, Masahiro
Ueno, Hiroaki
Matsuo, Hisayoshi
Ueda, Tetsuzo
Uemoto, Yasuhiro
Inoue, Kaoru
Tanaka, Tsuyoshi
Ueda, Daisuke
[J]. SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 1257 - 1262
[7] Techniques towards GaN power transistors with improved high voltage dynamic switching properties
Wuerfl, J.
Hilt, O.
Bahat-Treidel, E.
Zhytnytska, R.
Kotara, P.
Brunner, F.
Krueger, O.
Weyers, M.
[J]. 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2013,
[8] Simulation analysis of switching performance of GaN power transistors in a high-voltage configuration
Zelnik, R.
Pipiska, M.
[J]. 2020 21ST INTERNATIONAL SCIENTIFIC CONFERENCE ON ELECTRIC POWER ENGINEERING (EPE), 2020, : 127 - 132
[9] Physics of GaN-based Power Field Effect Transistors
Shur, M.
[J]. GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 2, 2012, 50 (03): : 129 - 138
[10] Positive and negative threshold voltage instabilities in GaN-based transistors
Meneghesso, G.
Meneghini, M.
De Santi, C.
Ruzzarin, M.
Zanoni, E.
[J]. MICROELECTRONICS RELIABILITY, 2018, 80 : 257 - 265

← 1 2 3 4 5 →