Design and Fabrication of GaN HEMT Based Power Amplifier

被引：1

作者：

Tomar, Sanjay Kumar ^{[1
]}

Mishra, Meena ^{[1
]}

Kumar, Ashok ^{[1
]}

Sehgal, B. K. ^{[1
]}

机构：

[1] Minist Def, DRDO, Solid State Phys Lab, New Delhi, India

来源：

PHYSICS OF SEMICONDUCTOR DEVICES | 2014年

关键词：

Power amplifier; GaN HEMT; Power Added efficiency;

D O I：

10.1007/978-3-319-03002-9_31

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses the design and measurement of highly efficient GaN HEMT based power amplifier at L Band. Large signal parameters including PAE and power output are presented at an operating frequency of 1GHz. High efficiency > 82% is achieved by terminating the harmonics at the input as well as at the output and a high output power of 5.2 W is achieved by impedance matching or tuning technique.

引用

页码：125 / 126

页数：2

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