Design and Fabrication of GaN HEMT Based Power Amplifier

被引：1
|
作者：
Tomar, Sanjay Kumar [1 ]
Mishra, Meena [1 ]
Kumar, Ashok [1 ]
Sehgal, B. K. [1 ]
机构：
[1] Minist Def, DRDO, Solid State Phys Lab, New Delhi, India
来源：
PHYSICS OF SEMICONDUCTOR DEVICES | 2014年
关键词：
Power amplifier; GaN HEMT; Power Added efficiency;
D O I：
10.1007/978-3-319-03002-9_31
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper discusses the design and measurement of highly efficient GaN HEMT based power amplifier at L Band. Large signal parameters including PAE and power output are presented at an operating frequency of 1GHz. High efficiency > 82% is achieved by terminating the harmonics at the input as well as at the output and a high output power of 5.2 W is achieved by impedance matching or tuning technique.
引用
收藏
页码：125 / 126
页数：2
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