Simulation and Design of Ku Band Power Amplifier Based on GaN HEMT

被引：0
|
作者：
Li, Hengjin [1 ]
Zhu, Dalong [1 ]
Liu, Dexi [1 ]
机构：
[1] Beijing Res Inst Telemetry, Beijing, Peoples R China
来源：
2014 IEEE INTERNATIONAL CONFERENCE ON COMMUNICATION PROBLEM-SOLVING (ICCP) | 2014年
关键词：
GaN HEMT; Ku band; power amplifier;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Ku band solid state power amplifier was designed with a GaN HEMT large signal model in this paper. The circuits, which include input matching network, output matching network and bias network, were simulated with commercial software. An entire simulation model of the power amplifier was then established for some key performance. The result shows that output power higher than 45.3dBm, power gain greater than 7.3dB and PAE(power added efficiency) over 30% during 13.3GHz similar to 13.7GHz.
引用
收藏
页码：202 / 204
页数：3
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