Design of Ku-band GaN HEMT power amplifier based on multi-bias statistical model

被引：4
|
作者：
Chen, Zhikai [1 ]
Xu, Yuehang [1 ]
Wang, Changsi [1 ]
Wen, Zhang [1 ]
Xu, Ruimin [1 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Elect Engn, EHF Key Lab Fundamental Sci, Chengdu 611731, Peoples R China
来源：
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS | 2017年 / 30卷 / 01期
关键词：
equivalent circuit parameters; GaN HEMT; Monte Carlo simulation; power amplifier; statistical model; FET; MESFET;
D O I：
10.1002/jnm.2130
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A design method for microwave GaN high-electron mobility transistor (HEMT) power amplifier based on equivalent circuit parameters multi-bias statistical models is presented. The statistical modeling method includes principal component analysis, factor analysis, and multiple regressions modeling techniques. The statistical model is validated by comparing original and Monte Carlo-simulated means, standard deviations, correlation matrix, and S-parameters. A Ku-band GaN HEMT power amplifier is designed with high drain efficiency by using the established statistical model for demonstration purpose. The simulated results are statistically indistinguishable from the measured results. This method is suitable for GaN HEMT power amplifier design and yield analysis. Copyright (c) 2015 John Wiley & Sons, Ltd.
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页数：8
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