Operation methods of resistive random access memory

被引：11
|
作者：
Wang GuoMing [1 ,2 ]
Long ShiBing [2 ]
Zhang MeiYun [2 ]
Li Yang [2 ]
Xu XiaoXin [2 ]
Liu HongTao [1 ,2 ]
Wang Ming [2 ]
Sun PengXiao [2 ]
Sun HaiTao [2 ]
Liu Qi [2 ]
Lu HangBing [2 ]
Yang BaoHe [1 ]
Liu Ming [2 ]
机构：
[1] Tianjin Univ Technol, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Device Integrat, Beijing 100029, Peoples R China
来源：
SCIENCE CHINA-TECHNOLOGICAL SCIENCES | 2014年 / 57卷 / 12期
基金：
中国国家自然科学基金; 国家高技术研究发展计划(863计划);
关键词：
resistive random access memory; operation method; voltage sweeping mode; current sweeping mode; constant current stress; constant voltage stress; rectangular pulse mode; triangle pulse mode; SWITCHING MEMORIES; THIN-FILMS; RESET; MECHANISMS; MODEL; TRANSITION; VOLTAGE; DEVICES; SIMULATION; PARAMETER;
D O I：
10.1007/s11431-014-5718-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, different electrical measurement and operation methods of resistive random access memory (RRAM) have been summarized, including voltage sweeping mode (VSM), current sweeping mode (CSM), constant current stress (CCS), constant voltage stress (CVS), rectangular pulse mode (RPM), and triangle pulse mode (TPM). Meanwhile, the effects of these measurement methods on the forming, set, reset and read operation as well as endurance performance have been compared. Finally, their respective controllability of various resistive switching parameters have been summarized and analyzed.
引用
收藏
页码：2295 / 2304
页数：10
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