Three-dimensional deposition of ZnO thin layer on nanopatterned silicon substrate

Three-dimensional deposition of 15 nm thick ZnO thin layer can be achieved successfully on nano patterned silicon substrate. The nanopatterned silicon (NPSi) substrate was prepared by two-step ICP etching using anodic aluminum oxide (AAO) film as etching mask. The average diameter and depth for the silicon nanopore arrays are approximately 60 nm and 300 nm, respectively. Also, the NPSi substrate was entirely covered by ZnO thin layer grown by atomic layer deposition. It is believed that the above mentioned process may provide a good alternative for the preparation of three-dimensional ZnO film and device. (C) 2016 Elsevier B.V. All rights reserved.