Design of operational transconductance amplifiers with improved gain by using graded-channel SOI nMOSFETs

被引：1
|
作者：
Gimenez, SP [1 ]
Pavanello, MA [1 ]
Martino, JA [1 ]
Adriaensen, S [1 ]
Flandre, D [1 ]
机构：
[1] Univ Sao Paulo, Escola Politecn, Lab Sistemas Integraveis, BR-05508900 Sao Paulo, Brazil
来源：
16TH SYMPOSIUM ON INTEGRATED CIRCUITS AND SYSTEMS DESIGN, SBCCI 2003, PROCEEDINGS | 2003年
关键词：
D O I：
10.1109/SBCCI.2003.1232802
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper is presented, for the first time, the design of a single-stage operational transconductance amplifiers (OTA) implemented with Graded-Channel (GC) SOI nMOSFETs. Different design conditions were taken in account such as similar power dissipation, transconductance over drain current ratio and die area. Comparisons with OTA made with conventional SOI transistors are performed showing that the GC OTAs present larger open-loop gain without degrading the phase margin, unit gain frequency and slew rate. GC OTAs can also provide the mentioned improvements while simultaneously reducing the required die area. Circuit simulations and experimental results are used to support the analysis.
引用
收藏
页码：26 / 31
页数：6
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