Comparative Analysis of Transcapacitances in Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs

被引：1

作者：

Alves, Camila Restani ^{[1
]}

D'Oliveira, Ligia Martins ^{[1
]}

de Souza, Michelly ^{[1
]}

机构：

[1] Ctr Univ FEI, Dept Elect Engn, Sao Bernardo Do Campo, Brazil

来源：

2022 IEEE LATIN AMERICAN ELECTRON DEVICES CONFERENCE (LAEDC) | 2022年

关键词：

MOSFET; Asymmetric; Self-cascode; Capacitance; Analog Performance; Silicon-On-Insulator;

D O I：

10.1109/LAEDC54796.2022.9907771

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents a comparative study of the transcapacitances of asymmetric self-cascode (A-SC) and graded-channel (GC) silicon-on-insulator (SOI) nMOSFETs, by means of two-dimensional numerical simulations. Simulated results show that the gate-to-drain capacitance is smaller for the ASC SOI device if compared to the GC SOI device, despite of the applied V-DS.

引用

页数：4

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