BCB-to-oxide bonding technology for 3D integration

被引：7
|
作者：
Lin, S. L. [1 ]
Huang, W. C. [1 ]
Ko, C. T. [1 ]
Chen, K. N. [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
来源：
MICROELECTRONICS RELIABILITY | 2012年 / 52卷 / 02期
关键词：
D O I：
10.1016/j.microrel.2011.05.008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Process optimization of BCB polymer to silicon oxide bonding was investigated. The suitable bonding temperature is about 300 degrees C, while bond failure of BCB-to-oxide bonding is observed starting from 400 degrees C. Bonding interface morphologies and bond strengths of BCB-to-oxide bonding were investigated as well. PECVD oxide to BCB bonding has better bonding quality than that of thermal oxide to BCB bonding. Si-O-Si bonds may be the reason of a strong BCB to oxide bonding. Water molecules link BCB and oxide surfaces during the initial contact, while Si-O-Si bonds are formed during bonding. This proposed mechanism of BCB-to-oxide bonding provides a guideline for polymer to oxide hybrid bonding technology in 3D integration. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：352 / 355
页数：4
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