III-V nanoelectronics

被引：4
|
作者：
Beaumont, SP
机构：
[1] Nanoelectronics Research Centre, Dept. of Electron. and Elec. Eng., University of Glasgow
来源：
MICROELECTRONIC ENGINEERING | 1996年 / 32卷 / 1-4期
关键词：
nanoelectronics; III-V; Ga(Al)As; lithography;
D O I：
10.1016/0167-9317(95)00367-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The study of nanoelectronic devices, where critical dimensions lie in the 10-100nm size range, has been particularly fruitful in III-V semiconductors due in large part to a favourable combination of precise fabrication technologies and excellent electron transport properties. This paper briefly reviews some of the techniques employed to make devices and nanometre-scale semiconductor structures, then surveys the main classes of nanoelectronic devices studied to date.
引用
收藏
页码：283 / 295
页数：13
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