Mechanisms of current conduction in Pt/BaTiO3/Pt resistive switching cell

被引：30
|
作者：
Pan, R. K. [1 ]
Zhang, T. J. [1 ]
Wang, J. Y. [1 ]
Wang, J. Z. [1 ]
Wang, D. F. [1 ,2 ,3 ]
Duan, M. G. [1 ]
机构：
[1] Hubei Univ, Sch Mat Sci & Engn, Wuhan 430062, Peoples R China
[2] Hanyang Univ, Q Psi, Seoul 133791, South Korea
[3] Hanyang Univ, Dept Phys, Seoul 133791, South Korea
来源：
THIN SOLID FILMS | 2012年 / 520卷 / 11期
基金：
中国国家自然科学基金;
关键词：
Barium titanate; Resistive switching; Thin films; Conduction mechanism; Sputtering; THIN-FILMS; BEHAVIOR;
D O I：
10.1016/j.tsf.2012.01.013
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The 80-nm-thickness BaTiO3 (BT) thin film was prepared on the Pt/Ti/SiO2/Si substrate by the RF magnetron sputtering technique. The Pt/BT/Pt/Ti/SiO2/Si structure was investigated using X-ray diffraction and scanning electron microscopy. The current-voltage characteristic measurements were performed. The bipolar resistive switching behavior was found in the Pt/BT/Pt cell. The current-voltage curves were well fitted in different voltage regions at the high resistance state (HRS) and the low resistance state (LRS), respectively. The conduction mechanisms are concluded to be Ohmic conduction and Schottky emission at the LRS, while space-charge-limited conduction and Poole-Frenkel emission at the HRS. The electroforming and switching processes were explained in terms of the valence change mechanism, in which oxygen vacancies play a key role in forming conducting paths. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：4016 / 4020
页数：5
相关论文
共 50 条
  • [1] The resistive switching effects in BaTiO3/ZnO/BaTiO3/Carbon film
    Wang, Junshuai
    Liang, Dandan
    Li, Xiaoping
    Wu, Liangchen
    Lu, Yu
    Tang, Yuanyuan
    Chen, Peng
    [J]. FUNCTIONAL MATERIALS LETTERS, 2018, 11 (03)
  • [2] Light enhanced resistive switching in BaTiO3/CoFeB/BaTiO3 structure
    Li, Hongwei
    Sun, Bai
    Wei, Lujun
    Wu, Jianhong
    Jia, Xiangjiang
    Zhao, Wenxi
    Chen, Peng
    [J]. FUNCTIONAL MATERIALS LETTERS, 2016, 9 (05)
  • [3] EPITAXIAL BATIO3 ON PT SUBSTRATE
    TADA, O
    SHINTANI, Y
    YOSHIDA, Y
    [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 498 - &
  • [4] Large rectifying leakage current in Pt/BaTiO3/Nb:SrTiO3/Pt structure
    Zhang, T. J.
    Pan, R. K.
    Ma, Z. J.
    Duan, M. G.
    Wang, D. F.
    He, M.
    [J]. APPLIED PHYSICS LETTERS, 2011, 99 (18)
  • [5] Wetting at the BaTiO3/Pt interface
    Fredrickson, Kurt D.
    Posadas, Agham B.
    Demkov, Alexander A.
    Dubourdieu, Catherine
    Bruley, John
    [J]. JOURNAL OF APPLIED PHYSICS, 2013, 113 (18)
  • [6] Electric-field induced transition of resistive switching behaviors in BaTiO3/Co:BaTiO3/BaTiO3 trilayers
    Li, S.
    Wei, X. H.
    Zeng, H. Z.
    [J]. APPLIED PHYSICS LETTERS, 2013, 103 (13)
  • [7] Mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell
    Jeong, Doo Seok
    Schroeder, Herbert
    Waser, Rainer
    [J]. PHYSICAL REVIEW B, 2009, 79 (19):
  • [8] Effect of ferroelectricity on electron transport in Pt/BaTiO3/Pt tunnel junctions
    Velev, J. P.
    Duan, Chun-Gang
    Belashchenko, K. D.
    Jaswal, S. S.
    Tsymbal, E. Y.
    [J]. PHYSICAL REVIEW LETTERS, 2007, 98 (13)
  • [9] Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions
    Qian, Mengdi
    Fina, Ignasi
    Sanchez, Florencio
    Fontcuberta, Josep
    [J]. ADVANCED ELECTRONIC MATERIALS, 2019, 5 (01)
  • [10] Complementary resistive switching in BaTiO3/NiO bilayer with opposite switching polarities
    Li, Shuo
    Wei, Xianhua
    Lei, Yao
    Yuan, Xincai
    Zeng, Huizhong
    [J]. APPLIED SURFACE SCIENCE, 2016, 389 : 977 - 982
12345