Large rectifying leakage current in Pt/BaTiO3/Nb:SrTiO3/Pt structure

被引：24
|
作者：
Zhang, T. J. [1 ]
Pan, R. K. [1 ]
Ma, Z. J. [1 ]
Duan, M. G. [1 ]
Wang, D. F. [1 ,2 ,3 ]
He, M. [1 ]
机构：
[1] Hubei Univ, Sch Mat Sci & Engn, Wuhan 430062, Peoples R China
[2] Hanyang Univ, Q Psi, Seoul 133791, South Korea
[3] Hanyang Univ, Dept Phys, Seoul 133791, South Korea
来源：
APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 18期
基金：
中国国家自然科学基金;
关键词：
SRTIO3; FILMS;
D O I：
10.1063/1.3658453
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
20-nm-thickness epitaxial BaTiO3 (BTO) thin films were prepared on the Nb-doped SrTiO3 single-crystal substrates by RF magnetron sputtering technology. The rectifying characteristic current-voltage curves were observed and was discussed using the Schottky barrier model taking into account the movement of oxygen vacancies. The leakage current mechanisms were interpreted by the Schottky emission and Poole-Frenkel emission near the Pt/BTO interface at lower bias and higher bias, respectively. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3658453]
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页数：3
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