Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers

被引：3
|
作者：
Kim, D. H. [1 ]
Kim, D. K. [1 ]
Cho, J. U. [1 ]
Park, S. Y. [2 ]
Isogami, S. [3 ]
Tsunoda, M. [4 ]
Takahashi, M. [4 ]
Fullerton, E. E. [5 ]
Kim, Y. K. [1 ]
机构：
[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
[2] Korea Basic Sci Inst, Div Mat Sci, Taejon 305333, South Korea
[3] Fukushima Natl Coll Technol, Dept Gen Educ, Iwaki, Fukushima 9708034, Japan
[4] Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 9808579, Japan
[5] Univ Calif San Diego, Ctr Magnet Recording Res, La Jolla, CA 92093 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 09期
基金：
新加坡国家研究基金会;
关键词：
BIAS-VOLTAGE-DEPENDENCE; ROOM-TEMPERATURE; MAGNETORESISTANCE;
D O I：
10.1063/1.4709738
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the efficacy of CoFeB/FeNiSiB hybrid ferromagnetic layers as free layers in magnetic tunnel junctions. A junction with a CoFeB (2.25 nm)/FeNiSiB (0.75 nm) free layer exhibited a tunneling magnetoresistance ratio and a resistance-area product value of 130% and 25 Omega mu m(2), respectively. The critical current density for spin transfer torque (STT) switching was 2.3 MA/cm(2). This study suggests that the addition of an amorphous FeNiSiB in the free layer enhances the magnetotransport properties. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709738]
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页数：4
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