In-situ nanoindentation of epitaxial TiN/MgO (001) in a transmission electron microscope

被引：28
|
作者：
Minor, AM [1 ]
Stach, EA
Morris, JW
Petrov, I
机构：
[1] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Natl Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[4] Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA
[5] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2003年 / 32卷 / 10期
关键词：
nanoindentation; in situ; transmission electron microscopy; epitaxial film; plasticity; dislocation;
D O I：
10.1007/s11664-003-0084-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The deformation behavior of the epitaxial TiN/MgO (001) thin film/substrate system was studied through in-situ nanoindentation in a transmission electron microscope (TEM). The required sample geometry was prepared using Ga+ focused ion beam (FIB) etching. During room-temperature indentation, both the TiN film and the MgO substrate deformed through the motion of dislocations. The result was a localized hemispherical plastic zone in the TiN film directly under the indentation contact area, forming an 8degrees tilt boundary. These results show directly that small-scale plasticity in TiN can occur at room temperature through the motion of dislocations.
引用
收藏
页码：1023 / 1027
页数：5
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