High-temperature continuous-wave operation of directly grown InAs/GaAs quantum dot lasers on on-axis Si (001)

被引：50
|
作者：
Kwoen, Jinkwan [1 ]
Jang, Bongyong [1 ]
Watanabe, Katsuyuki [1 ]
Arakawa, Yasuhiko [1 ]
机构：
[1] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Komaba 4-6-1, Tokyo 1538505, Japan
来源：
OPTICS EXPRESS | 2019年 / 27卷 / 03期
关键词：
THRESHOLD CURRENT-DENSITY; SILICON; RECOMBINATION; PHOTONICS; GAIN;
D O I：
10.1364/OE.27.002681
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Laser devices for silicon photonics are expected to be implemented in an integrated environment to complement CMOS devices. For this reason, quantum dot (QD) lasers with excellent thermal properties have been considered as strong candidates for Si photonics light sources. The direct growth of QD lasers on Si (001) on-axis substrates has been garnering attention owing to the possibility of monolithic integration on a CMOS-compatible wafer. In this paper. we report on the high-temperature (over 100 degrees C) continuous-wave operation of an InAs/GaAs QD laser directly grown on on-axis Si (001) substrates through the use of only molecular beam epitaxy. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码：2681 / 2688
页数：8
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