Low Threshold Epitaxial InAs Quantum Dot Lasers on On-Axis GaP/Si (001)

被引：0

作者：

Norman, Justin ^{[1
]}

Jung, Daehwan ^{[1
]}

Kennedy, M. J. ^{[2
]}

Shang, Chen ^{[1
]}

Gossard, Arthur C. ^{[1
,2
]}

Bowers, John E. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC) | 2017年

关键词：

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report 1300 nm continuous wave lasing on an on-axis GaP/Si (001) virtual substrate operating up to 60 degrees C with record low threshold current of 27 mA. Ridge and broad area lasers were fabricated with seven layers of p-modulation doped quantum dots and as-cleaved facets.

引用

页码：403 / 404

页数：2

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