Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si

被引：107

作者：

Norman, Justin ^{[1
]}

Kennedy, M. J. ^{[2
]}

Selvidge, Jennifer ^{[1
]}

Li, Qiang ^{[3
]}

Wan, Yating ^{[3
]}

Liu, Alan Y. ^{[1
]}

Callahan, Patrick G. ^{[1
]}

Echlin, McLean P. ^{[1
]}

Pollock, Tresa M. ^{[1
]}

Lau, Kei May ^{[3
]}

Gossard, Arthur C. ^{[1
]}

Bowers, John E. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[3] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

来源：

OPTICS EXPRESS | 2017年 / 25卷 / 04期

基金：

美国国家科学基金会;

关键词：

MICRO-DISK LASERS; SILICON PHOTONICS;

D O I：

10.1364/OE.25.003927

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

High performance III-V lasers at datacom and telecom wavelengths on on-axis (001) Si are needed for scalable datacenter interconnect technologies. We demonstrate electrically injected quantum dot lasers grown on on-axis (001) Si patterned with {111} v-grooves lying in the [110] direction. No additional Ge buffers or substrate miscut was used. The active region consists of five InAs/InGaAs dot-in-a-well layers. We achieve continuous wave lasing with thresholds as low as 36 mA and operation up to 80 degrees C. (C) 2017 Optical Society of America

引用

页码：3927 / 3934

页数：8

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