Analysis challenges for reliability improvement in silicon micromachined devices

被引：0
|
作者：
Radhakrishnan, MK [1 ]
机构：
[1] Philips Elect, CFT, Toa Payoh 319762, Singapore
来源：
SMART MATERIALS, STRUCTURES, AND SYSTEM, PTS 1 AND 2 | 2003年 / 5062卷
关键词：
MEMS; MEMS reliability; MEMS failure analysis;
D O I：
10.1117/12.514722
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Similar to silicon integrated circuits, the reliability improvement in MEMS devices starts with the very design and is a process involving all stages of manufacture and test. This process of building-in reliability is the resultant of various physical analyses to understand the failure mechanisms and to provide feedback to each stage for appropriate corrective actions. But, due to the structural uniqueness, the analysis of MEMS devices faces many challenges. Eventhough, a number of tools used for ICFA are being used for MEMS failure analysis, the methodology and application differs. An overview of the analysis issues for building-in reliability in MEMS devices is discussed.
引用
收藏
页码：846 / 852
页数：7
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