Reliability Improvement in Silicon Dioxide

被引：0

作者：

Minami, Masashi ^{[1
]}

Kamiura, Yoichi ^{[1
]}

机构：

[1] Okayama Univ, Okayama 7008530, Japan

来源：

DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV | 2012年 / 725卷

关键词：

Silicon dioxide; Defect generation; Pyrogenic; Oxidation; Time-dependent dielectric breakdown; Weibull distribution;

D O I：

10.4028/www.scientific.net/MSF.725.231

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

There are two typical methods for silicon oxidation. One is pyrogenic oxidation using oxygen and hydrogen, the other is dry oxidation using oxygen. In this study various properties of these oxidation films were compared. The pyrogenic oxidation in turn could show better characteristic values in the all experiments. Furthermore, once dry oxidation was used even before gate oxidation, we found that dry oxidation made a source of defects generation at surface of the Si substrate.

引用

页码：231 / 234

页数：4

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