Alternative materials for high numerical aperture extreme ultraviolet lithography mask stacks

被引：20

作者：

Wood, Obert ^{[1
]}

Raghunathan, Sudhar ^{[1
]}

Mangat, Pawitter ^{[1
]}

Philipsen, Vicky ^{[2
]}

Luong, Vu ^{[2
,3
]}

Kearney, Patrick ^{[4
]}

Verduijn, Erik ^{[5
]}

Kumar, Aditya ^{[1
]}

Patil, Suraj ^{[1
]}

Laubis, Christian ^{[6
]}

Soltwisch, Victor ^{[6
]}

Scholze, Frank ^{[6
]}

机构：

[1] GLOBALFOUNDRIES, Malta, NY 12020 USA

[2] IMEC, B-3001 Leuven, Belgium

[3] Katholieke Univ Leuven, B-3001 Leuven, Belgium

[4] SEMATECH, Albany, NY 12203 USA

[5] IMEC, GLOBALFOUNDRIES, B-3001 Leuven, Belgium

[6] Phys Tech Bundesanstalt, D-10587 Berlin, Germany

来源：

EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY VI | 2015年 / 9422卷

关键词：

EUV; EUV mask; mask stack; Ru/Si ML reflector; Ni-based absorber; rigorous 3D lithography simulation;

D O I：

10.1117/12.2085022

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper we compare the imaging performance of several options currently under consideration for use in 0.33 and higher numerical aperture (NA) extreme ultraviolet (EUV) mask stacks, Mo/Si ML reflective coatings with 40 bilayers, Ru/Si multilayer (ML) reflective coatings with 20 bilayers, and a new thinner Ni-based absorber layer on each of these mask stacks. The use of a Ru/Si ML coating with its shallower effective reflectance plane and a 2x thinner Ni-based absorber is expected to significantly reduce both shadow bias requirements and mask telecentricity errors. The conclusions of the paper are supported with the results of both experimental measurements and rigorous simulations.

引用

页数：12

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