Multi-beam mask writing opens up new fields of application, including curvilinear mask pattern for high numerical aperture extreme ultraviolet lithography

Multi-beam mask writers (MBMWs) from IMS Nanofabrication disrupted the mask writing technology in the past decade by offering this technology to the industry with a range of benefits over the preceding variable shaped beam technology. The MBMW-101 enabled write times independent of the pattern complexity, usage of low sensitivity resists at high throughput, and superior resolution and critical dimension uniformity (CDU) capabilities. With these benefits, the technology enabled high volume extreme ultraviolet (EUV) mask manufacturing and the use of inverse lithography technology (ILT) using curvilinear patterns for logic and memory applications to the industry. The MBMW-201 is today's standard technology for leading edge photo mask patterning and is used in the most advanced mask shops around the globe. Its superior robustness and powerful write modes allow for unprecedented writing efficiency and resolution capability. Now IMS has broadened the spectrum of applications for this technology and released two new products. The MBMW-100 Flex is a versatile mask writer to open multi-beam benefits to mature and intermediate node applications at high throughput and beneficial total cost of ownership, targeting nodes from 32 nm to 10 nm. The MBMW-301 is the third generation leading edge mask writer for ultra-low sensitivity resists with resolution and CDU capabilities meeting EUV high numerical aperture requirements targeting nodes down to 2 nm and beyond. This article will delve into the transformational journey of multi-beam mask writing, from its early beginnings to its current status as the cornerstone of EUV mask production, and provide an overview of the two new models with performance data and lithography results. (c) The Authors. Published by SPIE under a Creative Commons Attribution 4.0 International License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.