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Characterization of polysilicon bipolar transistors by low-frequency noise and correlation noise measurements

被引：9
|
作者：
Mourier, Y [1 ]
G-Jarrix, S [1 ]
Delseny, C [1 ]
Pascal, F [1 ]
Pénarier, A [1 ]
Gasquet, D [1 ]
机构：
[1] Univ Montpellier 2, CNRS, UMR 5507, Ctr Elect & Microoptoelect Montpellier, F-34095 Montpellier 5, France
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2001年 / 16卷 / 04期
关键词：
D O I：
10.1088/0268-1242/16/4/308
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-frequency noise measurements are performed in order to characterize quasi-self-aligned polysilicon bipolar transistors. After a theoretical analysis we present a study of the influence of the base source resistance on the correlation between the input and the output noise sources of the transistors. We observe that a partial correlation between the input and the output voltage noise sources appears and varies with the source resistance, the bias and the emitter size of the transistors. As a consequence we demonstrate the influence of the fluctuations of the collector current. Taking into account these results, we propose different extraction methods for the emitter and base series resistances. To confirm and extend these measurements, high-frequency results are also presented.
引用
收藏
页码：233 / 238
页数：6
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