Low-frequency noise of the quasi-neutral emitter region of bipolar transistors

被引：0

作者：

G. P. Kolomoets

N. N. Tkachenko

机构：

来源：

Measurement Techniques | 1997年 / 40卷

关键词：

Spectral Power Density; Polysilicon; Noise Spectrum; Noise Factor; Bipolar Transistor;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A method is proposed for measuring the low-frequency resistance fluctuations of the quasi-neutral region of bipolar transistors and the noise properties of KT3102 transistors are investigated.

引用

页码：91 / 93

页数：2

共 50 条

[1] Low-frequency noise of the quasi-neutral emitter region of bipolar transistors
Kolomoets, GP
Tkachenko, NN
[J]. MEASUREMENT TECHNIQUES, 1997, 40 (01) : 91 - 93
[2] Low-Frequency Noise of the Quasi-Neutral Emitter Region of Bipolar Transistors
Kolomoets, G. P.
Tkachenko, N. N.
[J]. Measurement Techniques (English translation of Izmeritel'naya Tekhnika), 40 (01):
[3] Low-frequency noise in polysilicon-emitter bipolar transistors
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Simoen, E
[J]. IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 2002, 149 (01): : 40 - 50
[4] LOW-FREQUENCY NOISE IN POLYSILICON EMITTER BIPOLAR-TRANSISTORS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (04) : 720 - 727
[5] LOW-FREQUENCY NOISE IN POLYSILICON-EMITTER BIPOLAR JUNCTION TRANSISTORS
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[J]. NOISE IN DEVICES AND CIRCUITS, 2003, 5113 : 1 - 15
[9] ON THE RECOMBINATION IN THE QUASI-NEUTRAL BASE OF POLYSILICON EMITTER TRANSISTORS WITH INTERFACIAL OXIDES
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[10] INVESTIGATION OF LOW-FREQUENCY NOISE OF BIPOLAR-TRANSISTORS
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