Low-frequency noise characterization of metamorphic InP/InGaAs heterojunction bipolar transistors on GaAs substrate

被引：0
|
作者：
Yang, H [1 ]
Wang, H [1 ]
Radhakrishnan, K [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Microelect, Singapore 639798, Singapore
来源：
2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2003年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low frequency (U) noise characteristics of MHBTs in the frequency range of 1Hz to 20 kHz are reported. The LF noise spectra of metamorphice heterojunction bipolar transistor (MHBT) exhibit only 1/f noise with no visible Lorentzains. The IN noise level of MHBTs is comparable to the one obtained for the referenced InP lattice-matched HBTs (LHBTs) suggesting that MHBT structures with good material quality could be achieved by the optimization of MBE material growth.
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页码：142 / 144
页数：3
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