DC characterization of metamorphic InP/InGaAs heterojunction bipolar transistors at elevated temperature

被引：0
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作者：
Yang, Hong [1 ]
Wang, Hong [1 ]
Ng, Geok Ing [1 ]
Zheng, Haiqun [1 ]
Radhakrishnan, K. [1 ]
机构：
[1] Microelectronics Centre, School of Elec. and Electronics Eng., Nanyang Technological University, Singapore 639798, Singapore
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 2 B期
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页码：1136 / 1138
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