Temperature dependent study on the microwave noise performance of metamorphic InP/InGaAs heterojunction bipolar transistors

被引：1
|
作者：
Yang, Hong [1 ]
Wang, Hong [1 ]
Radhakrishnan, K. [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Microelect Ctr, Singapore 639798, Singapore
来源：
THIN SOLID FILMS | 2007年 / 515卷 / 10期
关键词：
metamorphic; HBT; microwave noise;
D O I：
10.1016/j.tsf.2006.07.147
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, a detailed characterization on the microwave noise performance of high gain metamorphic heterojunction bipolar transistor (MHBT) in the temperature range of 300 K to 380 K is performed. The results art, compared between the MHBT and the referenced lattice-matched InP HBT (LHBT) devices. The minimum noise figure (NFmin) versus frequency in the range of 2 to 20 GHz at different temperatures for a 1.6 x 20 mu m(2) HBTs are measured. The experimental results show that the MHBT exhibits a slightly larger variation in NFmin compared to lattice-matched HBTs. Even though the MHBTs may have much higher thermal resistance, this may not significantly affect the device microwave noise performance. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：4514 / 4516
页数：3
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