Characterization of low temperature transport properties in InP/InGaAs double heterojunction bipolar transistors

被引：0
|
作者：
Wang, Hong [1 ]
Ng, Geok Ing [1 ]
机构：
[1] Nanyang Technological Univ, Singapore, Singapore
来源：
Conference Proceedings - International Conference on Indium Phosphide and Related Materials | 2000年
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
13
引用
收藏
页码：138 / 141
相关论文
共 50 条
  • [1] Characterization of low temperature transport properties in InP/InGaAs double heterojunction bipolar transistors
    Wang, H
    Ng, GI
    2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, : 138 - 141
  • [2] Fabrication and characterization of circular geometry InP/InGaAs double heterojunction bipolar transistors
    Loga, R
    Loga, R
    Vilches, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (07) : 855 - 858
  • [3] DC characterization of metamorphic InP/InGaAs heterojunction bipolar transistors at elevated temperature
    Yang, Hong
    Wang, Hong
    Ng, Geok Ing
    Zheng, Haiqun
    Radhakrishnan, K.
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (2 B): : 1136 - 1138
  • [4] An improved model for InP/InGaAs double heterojunction bipolar transistors
    Shi, Yuxia
    Jin, Zhi
    Su, Yongbo
    Cao, Yuxiong
    Wang, Yan
    SOLID-STATE ELECTRONICS, 2013, 81 : 163 - 169
  • [5] InP/InGaAs/InP Double Heterojunction Bipolar Transistors with 300 GHz Fmax
    Krishnan, S
    Dahlstrom, M
    Mathew, T
    Wei, Y
    Scott, D
    Urteaga, M
    Rodwell, MJW
    Liu, WK
    Lubyshev, D
    Fang, XM
    Wu, Y
    2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, : 31 - 34
  • [6] Low frequency noise of InP/InGaAs heterojunction bipolar transistors
    Penarier, A
    Pascal, F
    G-Jarrix, S
    Delseny, C
    Riet, M
    Blayac, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (2A): : 525 - 529
  • [7] DC characterization of-metamorphic InP/InGaAs heterojunction bipolar transistors at elevated temperature
    Yang, H
    Wang, H
    Ng, GI
    Zheng, HQ
    Radhakrishnan, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (2B): : 1136 - 1138
  • [8] Device performance and transport properties of high gain metamorphic InP/InGaAs heterojunction bipolar transistors at elevated temperature
    Yang, H
    Wang, H
    Ng, GI
    Zheng, HQ
    Radhakrishnan, K
    2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, : 200 - 203
  • [9] INP/INGAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN ON SI
    MAKIMOTO, T
    KURISHIMA, K
    KOBAYASHI, T
    ISHIBASHI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1991, 30 (12B): : 3815 - 3817
  • [10] Be diffusion in InGaAs/InP heterojunction bipolar transistors
    Bahl, SR
    Moll, N
    Robbins, VM
    Kuo, HC
    Moser, BG
    Stillman, GE
    IEEE ELECTRON DEVICE LETTERS, 2000, 21 (07) : 332 - 334
12345