Characterization of low temperature transport properties in InP/InGaAs double heterojunction bipolar transistors

被引：0
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作者：
Wang, Hong [1 ]
Ng, Geok Ing [1 ]
机构：
[1] Nanyang Technological Univ, Singapore, Singapore
来源：
Conference Proceedings - International Conference on Indium Phosphide and Related Materials | 2000年
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13
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页码：138 / 141
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