Structural Characterization of a Short-Period Superlattice Based on the CdF2/CaF2/Si(111) Heterostructure by Transmission Electron Microscopy and X-Ray Diffractometry

被引:0
|
作者
Sorokin, L. M. [1 ]
Kyutt, R. N. [1 ]
Ratnikov, V. V. [1 ]
Kalmykov, A. E. [1 ]
机构
[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia
关键词
superlattice; CdF2; CaF2; transmission electron microscopy; X-ray diffractometry; CDF2-CAF2; SUPERLATTICES; MBE-GROWTH; CONDUCTIVITY;
D O I
10.1134/S1063785021080125
中图分类号
O59 [应用物理学];
学科分类号
摘要
A detailed study of the structure of a short-period superlattice based on alternating layers of cadmium and calcium fluorides grown by molecular beam epitaxy on a silicon substrate (111) by transmission electron microscopy and X-ray diffractometry has been performed. It has been established that the superlattice is in a pseudomorphic state and a lateral inhomogeneity with a fragment size of 10-40 nm has been found. The reason for the broadening of the main and satellite peaks of the superlattice on the diffraction curve (111) has been elucidated.
引用
收藏
页码:893 / 896
页数:4
相关论文
共 48 条
  • [21] Triple crystal diffractometry, x-ray standing wave, and transmission electron microscopy investigation of shallow BF2 implantation in Si
    Bocchi, C
    Germini, F
    Ghezzi, G
    Gombia, E
    Mosca, R
    Nasi, L
    Mukhamedzhanov, EK
    Privitera, V
    Spinella, C
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (04): : 1436 - 1443
  • [22] CHARACTERIZATION OF SHORT-PERIOD SIMGEN SUPERLATTICES BY HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY AND X-RAY-DIFFRACTION
    JAGER, W
    STENKAMP, D
    EHRHART, P
    LEIFER, K
    SYBERTZ, W
    KIBBEL, H
    PRESTING, H
    KASPER, E
    THIN SOLID FILMS, 1992, 222 (1-2) : 221 - 226
  • [23] High resolution x-ray reflectometry and diffraction of CaF2/Si(111) structures grown by molecular beam epitaxy
    Abramof, E
    Ferreira, SO
    Rappl, PHO
    Ueta, AY
    Boschetti, C
    Closs, H
    Motisuke, P
    Bandeira, IN
    INFRARED APPLICATIONS OF SEMICONDUCTORS II, 1998, 484 : 661 - 666
  • [24] X-RAY, TRANSMISSION ELECTRON-MICROSCOPY AND ATOMIC-FORCE MICROSCOPY CHARACTERIZATION OF SIC THIN-FILMS ON SI(111)
    KRAUSSLICH, J
    FISSEL, A
    KAISER, U
    GOETZ, K
    DRESSLER, L
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1995, 28 (04) : 759 - 763
  • [25] BALLISTIC-ELECTRON-EMISSION MICROSCOPY STUDY OF THE AU/SI(111)7X7 AND AU/CAF2/SI(111)7X7 INTERFACES
    CUBERES, MT
    BAUER, A
    WEN, HJ
    PRIETSCH, M
    KAINDL, G
    APPLIED PHYSICS LETTERS, 1994, 64 (17) : 2300 - 2302
  • [26] Soft X-ray emission spectroscopy study of CaF2(film)/Si(111): non-destructive buried interface analysis
    Iwami, M
    Kusaka, M
    Hirai, M
    Tagami, R
    Nakamura, H
    Watabe, H
    APPLIED SURFACE SCIENCE, 1997, 117 : 434 - 437
  • [27] Soft X-ray emission spectroscopy study of CaF2(film)/Si(111): Non-destructive buried interface analysis
    Okayama Univ, Okayama, Japan
    Appl Surf Sci, (434-437):
  • [28] ULTRAHIGH-VACUUM SCANNING ELECTRON-MICROSCOPY CHARACTERIZATION OF THE GROWTH OF FE ON CAF2/SI(111) - SELECTIVE NUCLEATION ON ELECTRON-BEAM MODIFIED SURFACES
    HEIM, KR
    HEMBREE, GG
    SCHEINFEIN, MR
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) : 8105 - 8112
  • [29] Defect characterization in epitaxial ZnO/epi-GaN/Al2O3 heterostructures:: transmission electron microscopy and triple-axis X-ray diffractometry
    Hong, SK
    Ko, HJ
    Chen, YF
    Yao, T
    JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) : 537 - 541
  • [30] X-RAY-DIFFRACTION, TRANSMISSION ELECTRON-MICROSCOPY AND X-RAY PHOTOELECTRON SPECTROSCOPIC CHARACTERIZATION OF IRO2+TA2O5 FILMS
    ROGINSKAYA, YE
    MOROZOVA, OV
    LOUBNIN, EN
    POPOV, AV
    ULITINA, YI
    ZHUROV, VV
    IVANOV, SA
    TRASATTI, S
    JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS, 1993, 89 (11): : 1707 - 1715