Thermally stable Ti/Al/W/Au multilayer ohmic contacts on n-type GaN

被引：5
|
作者：
Lee, H. C. [1 ]
Bae, J. W. [1 ]
Yeom, G. Y. [1 ]
机构：
[1] Sungkyunkwan Univ, Dept Adv Mat Sci & Engn, Suwon 440746, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2007年 / 51卷 / 03期
关键词：
thermally stable; multilayer ohmic contact; GaN; W;
D O I：
10.3938/jkps.51.1046
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
As a multilayer ohmic contact scheme, Ti/Al/W/Au has been deposited on n-GaN, and the effect of the contact on the thermal stability and the ohmic contact resistivity was investigated. The multilayer contact showed high thermal stability for annealing temperatures from 600 degrees C to 900 degrees C by not showing an increase in surface roughness or lateral .diffusion. Also, the specific contact resistivity decreased with increasing annealing temperature, and a contact resistivity of 6.9 X 10(-6) Q-cm 2 could be obtained by the annealing at 900 degrees C for 30 seconds. The increase on the thermal stability of the multilayer contact was caused by the high diffusion barrier of tungsten preventing interdiffusion between Al and Au and especially preventing the lateral diffusion of Al.
引用
收藏
页码：1046 / 1049
页数：4
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