Thermally stable Ti/Al/W/Au multilayer ohmic contacts on n-type GaN

被引：5
|
作者：
Lee, H. C. [1 ]
Bae, J. W. [1 ]
Yeom, G. Y. [1 ]
机构：
[1] Sungkyunkwan Univ, Dept Adv Mat Sci & Engn, Suwon 440746, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2007年 / 51卷 / 03期
关键词：
thermally stable; multilayer ohmic contact; GaN; W;
D O I：
10.3938/jkps.51.1046
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
As a multilayer ohmic contact scheme, Ti/Al/W/Au has been deposited on n-GaN, and the effect of the contact on the thermal stability and the ohmic contact resistivity was investigated. The multilayer contact showed high thermal stability for annealing temperatures from 600 degrees C to 900 degrees C by not showing an increase in surface roughness or lateral .diffusion. Also, the specific contact resistivity decreased with increasing annealing temperature, and a contact resistivity of 6.9 X 10(-6) Q-cm 2 could be obtained by the annealing at 900 degrees C for 30 seconds. The increase on the thermal stability of the multilayer contact was caused by the high diffusion barrier of tungsten preventing interdiffusion between Al and Au and especially preventing the lateral diffusion of Al.
引用
收藏
页码：1046 / 1049
页数：4
相关论文
共 50 条
  • [41] Microstructure of Ti/Al and Ti/Al/Ni/Au ohmic contacts for n-GaN
    Ruvimov, S
    LilientalWeber, Z
    Washburn, J
    Duxstad, KJ
    Haller, EE
    Fan, ZF
    Mohammad, SN
    Kim, W
    Botchkarev, AE
    Morkoc, H
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (11) : 1556 - 1558
  • [42] The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN
    Chung, Roy B.
    Chen, Hung-Tse
    Pan, Chih-Chien
    Ha, Jun-Seok
    DenBaars, Steven P.
    Nakamura, Shuji
    [J]. APPLIED PHYSICS LETTERS, 2012, 100 (09)
  • [43] Combinatorial optimization of Ti/Al/Ti/Au ohmic contacts to n-GaN
    Davydov, AV
    Motayed, A
    Boettinger, WJ
    Gates, RS
    Xue, QZ
    Lee, HC
    Yoo, YK
    [J]. Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07): : 2551 - 2554
  • [44] Ohmic contacts to n-type GaN using Pd/Al metallization
    Ping, AT
    Khan, MA
    Adesida, I
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (05) : 819 - 824
  • [45] The influence of Pt in a Ti-Al-Pt-Au ohmic contact on n-type GaN
    Kachwalla, Z
    Wiggins, JW
    Chua, SJ
    Wang, W
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 176 (01): : 779 - 782
  • [46] Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN
    Luther, BP
    DeLucca, JM
    Mohney, SE
    Karlicek, RF
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (26) : 3859 - 3861
  • [47] W and W/WSi/In1-xAlxN ohmic contacts to n-type GaN
    Zeitouny, A
    Eizenberg, M
    Pearton, SJ
    Ren, F
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 59 (1-3): : 358 - 361
  • [48] Comparison of Ti/Al/Pt/Au and Ti/Au Ohmic contacts on n-type ZnCdO -: art. no. 012109
    Chen, JJ
    Jang, S
    Ren, F
    Rawal, S
    Li, Y
    Kim, HS
    Norton, DP
    Pearton, SJ
    Osinsky, A
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (01)
  • [49] Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600 °C in air
    Hou, Minmin
    Senesky, Debbie G.
    [J]. APPLIED PHYSICS LETTERS, 2014, 105 (08)
  • [50] Structural and electrical properties of Au and Ti/Au contacts to n-type GaN
    Dobos, L.
    Pecz, B.
    Toth, L.
    Horvath, Zs. J.
    Horvath, Z. E.
    Beaumont, B.
    Bougrioua, Z.
    [J]. VACUUM, 2008, 82 (08) : 794 - 798
12345