Generation of THz radiation in the photoconductive antennas based on epitaxial InGaAs films on GaAs substrates of various crystallographic orientations

被引：0

作者：

Kuznetsov, K. A. ^{[1
]}

Galiev, G. B. ^{[2
]}

Kitaeva, G. Kh. ^{[1
]}

Klimov, E. A. ^{[2
]}

Klochkov, A. N. ^{[1
]}

Leontyev, A. A. ^{[1
]}

Pushkarev, S. S. ^{[2
]}

Maltsev, P. P. ^{[2
]}

机构：

[1] Lomonosov Moscow State Univ, Fac Phys, Moscow 119991, Russia

[2] RAS, Inst Ultrahigh Frequency Semicond Elect, Moscow 117105, Russia

来源：

2018 INTERNATIONAL CONFERENCE LASER OPTICS (ICLO 2018) | 2018年

基金：

俄罗斯基础研究基金会;

关键词：

terahertz radiation; photoconductive antenna; molecular beam epitaxy; heterostructure; InGaAs film;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We study the THz wave generation by the time domain spectroscopy method in the spiral antennas fabricated on the low-temperature grown InGaAs layers on GaAs substrates with crystallographic orientations (100) and (111). It was frund that the THz wave generation is 3-4 times more effective in the case of (ii 1)A GaAs substrates as compared to the (100) substrates. Power-voltage characteristic of the InGaAs antenna up to and beyond threshold breakdown voltage is reported.

引用

页码：164 / 164

页数：1

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