Generation of THz radiation in the photoconductive antennas based on epitaxial InGaAs films on GaAs substrates of various crystallographic orientations

被引：0
|
作者：
Kuznetsov, K. A. [1 ]
Galiev, G. B. [2 ]
Kitaeva, G. Kh. [1 ]
Klimov, E. A. [2 ]
Klochkov, A. N. [1 ]
Leontyev, A. A. [1 ]
Pushkarev, S. S. [2 ]
Maltsev, P. P. [2 ]
机构：
[1] Lomonosov Moscow State Univ, Fac Phys, Moscow 119991, Russia
[2] RAS, Inst Ultrahigh Frequency Semicond Elect, Moscow 117105, Russia
来源：
2018 INTERNATIONAL CONFERENCE LASER OPTICS (ICLO 2018) | 2018年
基金：
俄罗斯基础研究基金会;
关键词：
terahertz radiation; photoconductive antenna; molecular beam epitaxy; heterostructure; InGaAs film;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We study the THz wave generation by the time domain spectroscopy method in the spiral antennas fabricated on the low-temperature grown InGaAs layers on GaAs substrates with crystallographic orientations (100) and (111). It was frund that the THz wave generation is 3-4 times more effective in the case of (ii 1)A GaAs substrates as compared to the (100) substrates. Power-voltage characteristic of the InGaAs antenna up to and beyond threshold breakdown voltage is reported.
引用
收藏
页码：164 / 164
页数：1
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