Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

被引：8
|
作者：
Ding, Xingwei [1 ,2 ]
Yang, Bing [3 ]
Xu, Haiyang [1 ,2 ]
Qi, Jie [4 ]
Li, Xifeng [1 ,2 ]
Zhang, Jianhua [1 ,2 ]
机构：
[1] Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China
[2] Shanghai Univ, Sch Mechatron & Automat, Shanghai 200072, Peoples R China
[3] Shanghai Univ, Sch Microelect, Shanghai 200072, Peoples R China
[4] Air Liquide Innovat Campus Shanghai, Res & Dev Dept, Shanghai 201108, Peoples R China
来源：
NANOMATERIALS | 2021年 / 11卷 / 10期
基金：
美国国家科学基金会;
关键词：
thin film transistors (TFTs); flexible; low-temperature; ultraviolet (UV); BIAS STRESS STABILITY; PHOTOCHEMICAL ACTIVATION; MOBILITY;
D O I：
10.3390/nano11102552
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Solution-processed thin film transistors (TFTs) used in flexible electronics require them to be fabricated under low temperature. Ultraviolet (UV) treatment is an effective method to transform the solution precursors into dense semiconductor films. In our work, high-quality indium zinc oxide (IZO) thin films were prepared from nitrate-based precursors after UV treatment at room temperature. After UV treatment, the structure of IZO thin films was gradually rearranged, resulting in good M-O-M network formation and bonds. TFTs using IZO as a channel layer were also fabricated on Si and Polyimide (PI) substrate. The field effect mobility, threshold voltage (V-th), and subthreshold swing (SS) for rigid and flexible IZO TFTs are 14.3 and 9.5 cm(2)/Vs, 1.1 and 1.7 V, and 0.13 and 0.15 V/dec., respectively. This low-temperature processed route will definitely contribute to flexible electronics fabrication.</p>
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页数：10
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