Analysis of the dependence of ferroelectric properties of strontium bismuth tantalate (SET) thin films on the composition and process temperature

被引：235
|
作者：
Noguchi, T
Hase, T
Miyasaka, Y
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 9B期
关键词：
ferroelectrics; thin film; SrBi2Ta2O9; hysteresis; fatigue; TEM; SEM; XRD; short circuit;
D O I：
10.1143/JJAP.35.4900
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ferroelectric properties, crystal structure and microstructures were examined for various Sr/Bi/Ta atomic ratio strontium bismuth tantalate (SET) films prepared by metalorganic decomposition at 700 and 800 degrees C. The 20% Sr-deficient and 10% Bi-excess (0.8/2.2/2) composition showed maximum remanet polarization (P-r) values for both 700 and 800 degrees C crystallization temperatures. From TEM analysis, the P-r dependence on composition variation around the stoichiometric 1/2/2 composition was related to grain size and volume of voids. The effect of postannealing after Pt top electrode fabrication was also studied. On the films prepared at 800 degrees C, postannealing markedly reduced the capacitor shorting rate. This was attributed to recrgstallization of the Pt top layer, based on SEM analysis of the Pt layer and the Pt/SBT inter face.
引用
收藏
页码：4900 / 4904
页数：5
相关论文
共 50 条
  • [31] Influence of the annealing temperature on the ferroelectric properties of niobium-doped strontium–bismuth tantalate
    Golosov D.A.
    Zavadski S.M.
    Kolos V.V.
    Turtsevich A.S.
    Okodzhi D.E.
    Russian Microelectronics, 2016, 45 (1) : 11 - 17
  • [32] Effect of excess bismuth on the microstructures and electrical properties of strontium bismuth tantalate (SBT) thin films
    Li, AD
    Wu, D
    Ling, HQ
    Yu, T
    Wang, M
    Yin, XB
    Liu, ZG
    Ming, NB
    THIN SOLID FILMS, 2000, 375 (1-2) : 215 - 219
  • [33] Stacking faults and their effects on ferroelectric properties in strontium bismuth tantalate
    Ding, Y.
    Liu, J.S.
    Zhu, J.S.
    Wang, Y.N.
    1600, American Institute of Physics Inc. (91):
  • [34] Preparation and ferroelectric properties of strontium barium bismuth tantalate ceramics
    Lu, CH
    Bai, JH
    INTEGRATED FERROELECTRICS, 1999, 26 (1-4) : 759 - 766
  • [35] Stacking faults and their effects on ferroelectric properties in strontium bismuth tantalate
    Ding, Y
    Liu, JS
    Zhu, JS
    Wang, YN
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (04) : 2255 - 2261
  • [36] Oxygen ion implantation in Strontium Bismuth Tantalate thin films
    Rico, L.
    Gomez, B. J.
    Stachiotti, M.
    Pellegri, N.
    Feugeas, J. N.
    de Sanctis, O.
    BRAZILIAN JOURNAL OF PHYSICS, 2006, 36 (3B) : 1009 - 1012
  • [37] Effect of heat treatment process on properties of calcium strontium bismuth titanate ferroelectric thin films
    College of Material Science and Engineering, Shandong Jianzhu University, Jinan 250101, China
    不详
    不详
    Kuei Suan Jen Hsueh Pao, 2007, 12 (1567-1571):
  • [38] Correlation Between Ferroelectric and Fluorescent Properties by Introducing Eu Atoms Into Strontium Bismuth Tantalate Films
    Aizawa, Koji
    Ohtani, Yusuke
    RARE-EARTH DOPING OF ADVANCED MATERIALS FOR PHOTONIC APPLICATIONS, 2009, 1111 : 271 - +
  • [39] Optical and X-ray characterization of ferroelectric strontium-bismuth-tantalate (SBT) thin films
    Fried, M.
    Petrik, P.
    Horvath, Z. E.
    Lohner, T.
    Schmidt, C.
    Schneider, C.
    Ryssel, H.
    APPLIED SURFACE SCIENCE, 2006, 253 (01) : 349 - 353
  • [40] Dielectric and ferroelectric properties of c-axis oriented strontium bismuth tantalate thin films applied transverse electric fields
    Kotani, K.
    Kawayama, I.
    Tonouchi, M.
    Hotta, Y.
    Tabata, H.
    Journal of Applied Physics, 2006, 99 (12):
12345