Correlation Between Ferroelectric and Fluorescent Properties by Introducing Eu Atoms Into Strontium Bismuth Tantalate Films

被引:0
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作者
Aizawa, Koji [1 ]
Ohtani, Yusuke [2 ]
机构
[1] Kanazawa Inst Technol, Optoelect Device Syst Res & Dev Ctr, 7-1 Ohgigaoka, Nonoichi, Ishikawa 9218501, Japan
[2] Kanazawa Inst Technol, Grad Sch Elect Engn & Elect, Nonoichi, Ishikawa 9218501, Japan
基金
日本科学技术振兴机构; 日本学术振兴会;
关键词
SRBI2TA2O9; THIN-FILMS; MEMORIES; BANDGAP;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electrical and fluorescent properties of Sr-deficient strontium bismuth tantalate co-doped with excess-Bi and Eu atoms (BiEu-SBT) were investigated, in which the Eu/Bi ratio was changed between 0 and 0.1. BiEu-SBT were synthesized on Pt (200 nm)/Ti (50 nm)/SiO2/Si substrates by using Sr0.8Bi2.2Ta2O9 and Sr-0.8(Bi-2, Eu-0.2)Ta2O9 mixed precursor solutions with a concentration of 0.33 mol/kg, in which Sr concentration was fixed at 0.8. From X-ray diffraction analysis, the diffraction peaks from Aurivillius phases were observed in the synthesized BiEu-SBT as well as in pure SBT. In BiEu-SBT, the lattice parameters along a- and c-axes at the Eu/Bi ratio of 0.1 in comparison with those of 0 decreased approximately 0.27 and 0.19%, respectively. The remnant polarization (2Pr) values of the synthesized BiEu-SBT with Eu/Bi ratio of 0 and 0.1 were approximately 8.4 and 6.8 mu C/cm(2), respectively. From photoluminescence (PL) measurement at a wavelength of 615 nm as a function of Eu/Bi ratio, the PL intensity of the synthesized BiEu-SBT was proportional to the Eu/Bi ratio, whereas, the 2Pr values were slightly decreased by Eu-doping.
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页码:271 / +
页数:2
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