A comparative study of atomic layer deposited advanced high-k dielectrics

被引：0
|
作者：
Dueñas, S [1 ]
Castán, H [1 ]
García, H [1 ]
Barbolla, J [1 ]
Kukli, K [1 ]
Aarik, J [1 ]
Ritala, M [1 ]
Leskela, M [1 ]
机构：
[1] Univ Valladolid, ETSI Telecomunicac, Dept Elect & Electron, E-47011 Valladolid, Spain
来源：
2005 Spanish Conference on Electron Devices, Proceedings | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A comparative electrical characterization of metal-insulator-semiconductor (MIS) structures fabricated from atomic layer deposited (ALD) Al2O3, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 dielectric thin films on silicon substrates has been carried out. The interface states as well as defects inside the insulator bulk were measured by using capacitance-voltage (C-V), deep level transient spectroscopy (DLTS) and conductance-transient (G-t) techniques. Interface quality is poorer in the case of Ta2O5 (Di, is about 6 x 10(12) cm(-2) eV(-1)) than in the Al2O3 ones (D-it values up to 1 x 10(12) cm(-2) eV-1). Also, the addition of Nb2O5 buffer layers to Ta2O5-based MIS degrades the structure (Di, reaches values of 1-2 x 10(13) cm(-2) eV(-1)).
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页码：29 / 32
页数：4
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