Mist deposited high-k dielectrics for next generation MOS gates

被引：31
|
作者：
Lee, DO [1 ]
Roman, P
Wu, CT
Mumbauer, P
Brubaker, M
Grant, R
Ruzyllo, J
机构：
[1] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA
[2] Penn State Univ, Nanofabricat Lab, University Pk, PA 16802 USA
[3] Primaxx Inc, Allentown, PA 18106 USA
来源：
SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 11期
关键词：
high-k; LSMCD; alternative gate dielectric; gas phase clean; mist deposition;
D O I：
10.1016/S0038-1101(02)00163-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the results of the characterization of high-k dielectric films deposited by liquid source misted chemical deposition in a cluster tool for advanced MOS gates. Electrical characterization was performed in conjunction with atomic force microscopy and transmission electron microscopy. It was determined that not all compositions investigated are equally compatible with mist deposition. The effects of in situ surface conditioning prior to deposition were also examined. Among processes investigated the sequence depositing SrTa2O6 on a nitrided oxide interlayer grown by a UV/NO process showed the best promise. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1671 / 1677
页数：7
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