High-k Dielectrics and Metal Gates for Future Generation Memory Devices

被引：11

作者：

Kittl, J. A. ^{[1
]}

Opsomer, K. ^{[1
]}

Popovici, M. ^{[1
]}

Menou, N. ^{[1
]}

Kaczer, B. ^{[1
]}

Wang, X. P. ^{[1
]}

Adelmann, C. ^{[1
]}

Pawlak, M. A. ^{[1
]}

Tomida, K. ^{[1
]}

Rothschild, A. ^{[1
]}

Govoreanu, B. ^{[1
]}

Degraeve, R. ^{[1
]}

Schaekers, M. ^{[1
]}

Zahid, M. ^{[1
]}

Delabie, A. ^{[1
]}

Meersschaut, J. ^{[1
]}

Polspoel, W. ^{[1
]}

Clima, S. ^{[1
]}

Pourtois, G. ^{[1
]}

Knaepen, W.

Detavernier, C.

Afanas'ev, V. V. ^{[2
]}

Blomberg, T. ^{[3
]}

Pierreux, D. ^{[4
]}

Swerts, J. ^{[4
]}

Fischer, P. ^{[4
]}

Maes, J. W. ^{[4
]}

Manger, D. ^{[5
]}

Vandervorst, W. ^{[1
]}

Conard, T. ^{[1
]}

Franquet, A. ^{[1
]}

Favia, P. ^{[1
]}

Bender, H. ^{[1
]}

Brijs, B. ^{[1
]}

Van Elshocht, S. ^{[1
]}

Jurczak, M. ^{[1
]}

Van Houdt, J. ^{[1
]}

Wouters, D. J. ^{[1
]}

机构：

[1] IMEC, Louvain, Belgium

[2] Katholieke Univ Leuven, Leuven, Belgium

[3] ASM Microchem, Helsinki, Finland

[4] ASM Belgium, Leuven, Belgium

[5] Qimonda, Leuven, Belgium

来源：

ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 5: NEW MATERIALS, PROCESSES, AND EQUIPMENT | 2009年 / 19卷 / 01期

关键词：

RANDOM-ACCESS MEMORY; (BA; SR)TIO3; THIN-FILMS; SRTIO3; DEPOSITION; LAYER;

D O I：

10.1149/1.3118928

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The requirements and development of high-k dielectric films for application in storage cells of future generation flash and Dynamic Random Access Memory (DRAM) devices are reviewed. Dielectrics with k-value in the 9-30 range are studied as insulators between charge storage layers and control gates in flash devices. For this application, large band gaps (> 6 eV) and band offsets are required, as well as low trap densities. Materials studied include aluminates and scandates. For DRAM metal-insulator-metal (MIM) capacitors, aggressive scaling of the equivalent oxide thickness (with targets down to 0.3 nm) drives the research towards dielectrics with k-values > 50. Due to the high aspect ratio of MIMCap structures, highly conformal deposition techniques are needed, triggering a substantial effort to develop Atomic Layer Deposition (ALD) processes for the deposition of metal gates and high-k dielectrics. Materials studied include Sr and Ba-based perovskites, with SrTiO3 as one of the most promising candidates, as well as tantalates, titanates and niobates.

引用

页码：29 / +

页数：3

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Menou, N.
Kaczer, B.
Wang, X. P.
Adelmann, C.
Pawlak, M. A.
Tomida, K.
Rothschild, A.
Govoreanu, B.
Degraeve, R.
Schaekers, M.
Zahid, M.
Delabie, A.
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Clima, S.
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